Analysis of the temperature performance of type-II interband cascade lasers
نویسندگان
چکیده
The temperature performance of type-II semiconductor lasers has been analyzed by comparing the temperature-concentration dependence for a charge-carrier subsystem at the threshold with steady-state temperature-concentration relationship implied by the carrier heating process. The low material gain characteristic of type-II heterostructures and the high resistance of the thermal link to the heat sink are primarily responsible for limiting the continuous-wave laser operation to low temperatures. We show also that the number of cascades for type-II interband cascade lasers can be optimized with respect to the highest achievable operating temperature. © 2004 American Institute of Physics. [DOI: 10.1063/1.1814432]
منابع مشابه
Temperature dependence of 4.1 m mid-infrared type II “W” interband cascade lasers
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